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| Ordering number : ENN7764 2SK3351 2SK3351 Features * * * N-Channel Silicon MOSFET DC / DC Converter Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 30 20 30 60 1 30 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) 1 RDS(on) 2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 10 1.0 14 20 11 15 1450 420 210 15 21 2.4 typ max Unit V A A V S m m pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-2617 No.7764-1/4 2SK3351 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=30A VDS=10V, VGS=10V, ID=30A VDS=10V, VGS=10V, ID=30A IS=30A, VGS=0 Ratings min typ 14 355 110 120 28 4.6 5 0.92 1.2 max Unit ns ns ns ns nC nC nC V Marking : K3351 Package Dimensions unit : mm 2083B 6.5 5.0 4 Package Dimensions unit : mm 2092B 2.3 1.5 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 1.2 0.85 0.5 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 1 0.6 0.8 2 3 2.5 1.2 0.85 0.7 5.5 7.0 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit VDD=15V 10V 0V VIN VIN ID=15A RL=1 PW=10s D.C.1% D G VOUT P.G 50 S 2SK3351 No.7764-2/4 2SK3351 10.0V 8.0V 6.0V 4.5V 12 ID -- VDS 3.5V 3.0V 16 14 ID -- VGS VDS=10V 10 Drain Current, ID -- A Drain Current, ID -- A Ta=75 C 0 0.5 1.0 1.5 2.0 8 VGS=2.5V 10 8 6 4 2 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 50 IT02766 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25C --25C 12 IT02767 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 ID=15A 4A Static Drain-to-Source On-State Resistance, RDS(on) -- m 45 25 20 15 V =4.5 , VGS 4A I D= =10V , VGS =15A ID 10 5 0 --75 --50 --25 0 25 50 75 100 125 150 175 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 yfs -- ID IT07199 100 7 5 3 2 Ambient Temperature, Ta -- C IT07200 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS=10V 25 C C Forward Current, IF -- A 10 7 5 3 2 1.0 7 5 3 2 2 3 5 7 10 23 0.3 0.4 0.5 0.6 --25 C 0.7 0.8 = Ta -- 75 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 Ta= 75 C 25 C C 25 0.9 1.0 1.1 1.2 Drain Current, ID -- A 1000 7 5 IT02770 10000 7 5 3 SW Time -- ID Diode Forward Voltage, VSD -- V IT02771 Ciss, Coss, Crss -- VDS VDS=15V VGS=10V f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 td(off) Ciss, Coss, Crss -- pF 2 Ciss 1000 7 5 3 2 100 7 5 0 5 10 15 20 25 30 IT02773 tf Coss tr td(on) Crss Drain Current, ID -- A IT02772 Drain-to-Source Voltage, VDS -- V No.7764-3/4 2SK3351 10 9 VGS -- Qg VDS=10V ID=30A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO <10s IDP=60A ID=30A DC 1m op era tio s Tc 10 0 s ms ) n( 10 =2 5 C Operation in this area is limited by RDS(on). 0.01 0.01 Tc=25C Single pulse 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC 1.2 IT07201 35 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V IT07202 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 30 25 0.8 20 0.6 15 0.4 10 0.2 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- C IT07203 Case Tamperature, Tc -- C IT07204 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.7764-4/4 |
Price & Availability of 2SK33511
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